A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation

Failure mechanism of trench IGBT under short-circuit after turn-off

Power semiconductor devices under short-circuit are submitted to high current and high voltage simultaneously that induce high electrical and thermal stresses. Several types of event leading to failure can appear under short circuit conditions in IGBT depending on the device structure, current load and voltage levels. One particular short circuit event appears once the device has turned off. Af...

A Comprehensive Mathematical Model for Analysis of WR-Resolvers under Stator Short Circuit Fault

Wound-Rotor (WR) resolvers are the most widely used position sensors in applications with harsh environmental conditions. However, their performance is exposed to failure due to the high risk of short circuit (SC) fault. Although the output current of the resolver is negligible, its thin copper wires increase the probability of the short circuit fault. To avoid the propagation of the turn-to-tu...

Physical Modeling of Igbt Turn on Behavior

Although IGBT turn on losses can be comparable to turn off losses, IGBT turn on has not been as thoroughly studied in the literature. Under clamped inductive load condition at turn on there is strong interaction between the IGBT and the freewheeling diode undergoing reverse recovery. A physics-based IGBT model is used that has been proved accurate in the simulation of IGBT turn off. Both resist...

TCAD simulation of current filamentation in adjacent IGBT cells under turn-on and turn-off short circuit condition

IGBT modules robustness during turn-off commutation

The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high junction temperatures and under different dr...